Dislocation Dissociation and Electrical Properties of Plastically Deformed Germanium Single Crystals

The dissociation of dislocations in at 680°C plastically deformed germanium single crystals of n-type is studied using the weak-beam technique of electron microscopy. Both, the Hall e.m.f. and de conductivity are measured within the temperature range 30 to 300 K. A dependence of the dissociation width of dislocations and electrical properties of deformed specimens on their cooling rate after deformation is observed. The “anomalous” dissociation of dislocations with a predominant screw component in rapidly cooled specimens and the different temperature dependences of concentrations and mobilities of the current carriers in rapidly and slowly cooled deformed specimens are connected with the presence of deformation-induced point defects in rapidly cooled specimens. According to quantitative estimations the “anomalous” dissociation of the above mentioned dislocations may be caused by the Coulomb repulsion of partial dislocations enforced by point defects localized near them.