The Effect of Annealing on the Defect Structure and Electrical Properties of Deformed Single Crystals of Ge

The dissociation of dislocations in deformed and annealed specimens of p-type germanium is studied using the weak-beam method of electron microscopy. Both, the Hall e.m.f. and dc conductivity are measured within the temperature range 4.2 to 300 K. It is shown that the splitting values of dislocations with a predominant screw component depend on the cooling rate and subsequent annealing of the deformed specimens. The effect of annealing on the concentration and the mobility of current carriers is also found. It is concluded that the splitting parameters of dislocations in the specimens under study are connected with the behavior and state of point defects.