We measured the band lineup of gallium phosphide (GaP) on crystalline silicon (c-Si) heterojunctions (HJs) by using internal photoemission (IPE), where the heterojunctions were prepared by using solid-source molecular beam epitaxy. It was found that the conduction-band and valence-band discontinuities, denoted by Δ E c and Δ E v , are 0.09±0.01 and 1.05±0.01 eV, respectively. By performing measurements on samples with different GaP layer thicknesses, we clarified that Δ E v of the present GaP-on-Si HJs is not affected by strain normal to the growth direction. The values of Δ E c and Δ E v obtained for the GaP-on-Si HJs are significantly different from those reported for thin Si-on-GaP HJs, and the implications of this discrepancy are briefly discussed.
No takes yet. Share an insight, caveat, or question.
Sakata et al. (2008) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: