The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the verification of direct energy gap and the realization of electrical injection laser devices at room temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Kunert et al. (2007) studied this question.
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