The percentage of backscattered electrons from a 50–4000-eV primary electron beam was measured for clean (100), (110), (111)A, and (111)B GaAs surfaces. The incident beam angle vaired between 0° and 60° from the surface normal. The influence of cesium and cesium oxide layers on the backscattering coefficient was investigated for (100) GaAs.
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Wolfgang Klein (1972) studied this question.
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