Cascade Capture of Non‐Equilibrium Carriers

The low‐temperature galvanomagnetic effects in non‐polar semiconductors are investigated under the condition that the non‐equilibrium carriers are captured by shallow attractive traps. The calculations are carried out assuming spherical constant energy surfaces in the momentum space. Numerical calculations are made for n‐Ge at 4.2 K. The possibility of using the results for the determination of some of the capture parameters is discussed.