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November 20, 2000Applied Physics Letters

Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization

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Authors

CCChen-Fu ChuChang Gung UniversityCYChang-Hung YuNational Yang Ming Chiao Tung UniversityYWY. K. WangInstitute of Electronics

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Chu et al. (2000) studied this question.

synapsesocial.com/papers/6a87b58c6e1dca10b7bb5278https://doi.org/10.1063/1.1327276
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN1999 · 155 citations
  2. 2Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme1998 · 42 citations
  3. 3Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment1998 · 214 citations
  4. 4Low-resistance ohmic contacts to p-type GaN1999 · 291 citations
  5. 5Very low resistance multilayer Ohmic contact to n-GaN1996 · 463 citations