Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

Large disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels–Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm2 V−1 s−1 in nitrogen atmosphere and 0.51 cm2 V−1 s−1 in air together with good device stability.