Lead titanate ferroelectric films on single-crystal silicon

This paper reports on the results of investigations into the phase transformations observed in Pb/Ti/Si and Ti/Pb/Si thin-film heterostructures upon layer-by-layer magnetron sputtering of lead and titanium onto a single-crystal silicon substrate and subsequent annealing in an oxygen atmosphere. It is shown that the dielectric properties of lead titanate films depend on the order of sputtering of lead and titanium metal layers onto the surface of single-crystal silicon. The ferroelectric properties are revealed in 3000-nm-thick lead titanate films prepared by two-stage annealing of the Pb/Ti/Si thin-film heterostructure (with the upper lead layer) at T 1 =473 K and T 2 =973 K for 10 min. These films are characterized by the coercive field E c =4.8 kV/cm and the spontaneous polarization P s =16.8 µC/cm 2 . The lead titanate films produced by annealing of the Ti/Pb/Si thin-film heterostructure (with the upper titanium layer) do not possess ferroelectric properties but exhibit properties of a conventional dielectric.