Heteroepitaxial Growth of SrBi₄Ti₄O₁₅/Bi₂Sr₂CuO6+y Structure by ArF Excimer Laser Ablation

Heteroepitaxial SrBi 4 Ti 4 O 15 /Bi 2 Sr 2 CuO 6+ y thin films were grown on (100)MgO substrates by the excimer laser ablation method. X-ray, reflection high-energy electron and low-energy electron diffraction (XRD, RHEED and LEED) revealed the epitaxial ordering of deposited film crystal oriented normal to the substrate surface, though the streak patterns were slightly dim. The permittivity of SrBi 4 Ti 4 O 15 film was obtained as 120 ε 0 from C-V measurement for Al/SrBi 4 Ti 4 O 15 /Bi 2 Sr 2 CuO 6+ y parallel plate capacitor.