A method for the calculation of the fast surface state spectrum in MIS structures is proposed. The method is based on the electrical differentiation of the h.f. C–U curves. The approach allows to obtain the low frequency differential spectrum of fast surface states in a relative simple manner. Some results of a low-temperature treatment influence on the fast surface state density and fixed oxide charge in Si-SiO2 system are given.
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Gorban et al. (1972) studied this question.
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