Physical and Dielectric Properties of the Metal-Silicon Dioxide-Silicon System

Thin film capacitors using silicon dioxide as the dielectric material have been prepared by the thermal oxidation of silicon. The physical and optical characteristics of the oxide dielectric are given, and the permittivity and loss tangent of the capacitors are shown as functions of a‐c frequency and d‐c bias. The dielectric properties are seen to be functions of the conductivity type and resistivity of the substrate silicon.