A simple Monte Carlo model is developed for understanding the multiplication process in HgCdTe infrared avalanche photodiodes and the impact of physical and technological parameters. A good agreement is achieved between simulations and experimental measurements of gain and excess noise factor. In both cases, an exponential gain and extremely low noise—F ~ 1for multiplication gains up to 1000—were observed on 5.1-cutoff devices at 77 K, indicative of a single carrier impact ionization. A comparison study is presented to explain the effect of different combinations of scattering processes on the avalanche phenomenon in HgCdTe.
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Derelle et al. (2009) studied this question.
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