Electroreflectance measurements with the electrolyte technique have been made on various p-type and n-type InAs specimens. The behavior of the spectra and the changeover from p-like to n-like characteristics of the n-type specimens has been studied for various carrier concentrations, electrolytes, and d.c. biasing voltages. The E 1 transitions of Ga x In 1−x As alloys close to InAs have then been remeasured and a parabolic variation of E 1 and E 1 + Δ 1 with x obtained.
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Kwan et al. (1968) studied this question.
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