The resistive switching effect of devices with metal-oxide-metal structure is a fascinating candidate for next generation nonvolatile memory devices. Here, self-assembled NiWO4 nano-nests on a Ti substrate were synthesized by a hydrothermal process. Moreover, a resistive switching memory device with Ag/NiWO4/Ti structure is demonstrated. The device shows an enhanced bipolar resistive switching effect under white-light illumination. This study is useful for exploring multifunctional materials and their applications in light-controlled nonvolatile memory devices.
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Sun et al. (2014) studied this question.
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