Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

This is the authors' abstract. We don't add key points for this paper.

A thick InGaN film was grown on a sapphire substrate by metal organic vapor phase epitaxy using a thin buffer layer of sputter-deposited InGaN. A thick film of highly luminescent In 0.2 Ga 0.8 N can be successfully grown at a rate as high as 2 µm/h. The crystal quality of InGaN grown on the sputter-deposited InGaN buffer layer was better than that of InGaN grown directly on the sapphire substrate. The sample showed n-type conduction with a carrier concentration and mobility of 5×10 18 cm -3 and 3 cm 2 /(V·s), respectively.