A method is proposed to accurately determine the electric-field impact on a p–n junction. The generation current component is separated from the total leakage current, with correction for the reverse-bias-dependent diffusion current. The sources of the electric-field enhancement are considered. The type of the dominant center, its distribution and energy, the local electric field due to imperfections, and the mechanical stress are determined.
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A. Czerwiński (1999) studied this question.
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