Electron traps revealing nonexponential kinetics of electron capturing were detected in DLTS spectra of dislocated silicon. Their apparent capture cross‐sections are dependent on temperature and on the filling state of the trap system. A model of deformationinduced damage in silicon is proposed.
No takes yet. Share an insight, caveat, or question.
Szkiełko et al. (1981) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: