Cathodoluminescence (CL) and continuous wave photoluminescence (cw-PL) were used to study carrier recombination in the InxGa1−xAs/GaAs system for x=0.1 and x=0.2. Ambipolar diffusion length values of LD=0.9±0.1 μm and of LD=0.5±0.1 μm are measured for x=0.1 and x=0.2, respectively, at 16 K. The CL analysis of dry-etched structures reveals a surface recombination velocity of S=107 cm/s for both material systems. A similar cw-PL study shows a dependence on laser excitation density, suggesting the saturation of sidewall traps when higher excitation densities are involved.
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Evoy et al. (1996) studied this question.