Epitaxial Gd ₂ O ₃ on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application

We report structural and electrical properties of hexagonal Gd 2 O 3 grown epitaxially on GaN/Si (1 1 1) and AlGaN/GaN/Si(1 1 1) virtual substrates. GaN and AlGaN/GaN heterostructures were grown on Si(1 1 1) substrates by plasma assisted molecular beam epitaxy (PA-MBE), whereas the Gd 2 O 3 layer was grown by the pulsed laser ablation (PLA) technique. Initial structural characterizations show that Gd 2 O 3 grown on III-nitride layers by PLA, exhibit a hexagonal structure with an epitaxial relationship as [ 0 0 0 1 ] G d 2 O 3 | | [ 0 0 0 1 ] G a N and [ 1 1 ¯ 0 0 ] G d 2 O 3 | | [ 1 1 ¯ 0 0 ]