Experimental Evidence of Dislocation Related Shallow States inp-Type Si

Theory, models, and experimental phenomena provide evidence of the existence of shallow bands in silicon induced by the dislocation strain field. Nevertheless, only deep bands, likely associated with contamination at dislocations, have been detected up to now by junction spectroscopy. Here we present the first experimental result by junction spectroscopy that assesses the existence of the dislocation related shallow states. These are found to be located at 70 and 60 meV from the valence and conduction band edge, respectively.