High-pressure/low-temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si-P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in several homologous orientations. Spin-lattice relaxation time measurements performed on both plastically deformed and neutron-irradiated silicon show the existence of an Orbach-type relaxation with an activation energy of about 23 meV corresponding to the thermal excitation energy of the resonant electron into its high-temperature state.
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Brohl et al. (1987) studied this question.
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