A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

Atomic structure investigation has been carried out on inversion domain boundaries in GaN layer grown on Si(111) by molecular-beam epitaxy. The comparison of the stacking sequences between simulated and experimental high resolution electron microscopy images shows the existence of two different atomic configurations for the inversion domain boundaries: the Holt model coexists with the V model inside the same layers. A mechanism allowing the switch from one model to the other by the interaction with the I1 stacking fault is proposed.