We have built a new TEM heating stage permitting the in situ application of an electric field on sample surfaces and have performed experiments on ferroelectric domain switching in BaTiO3. The domain growth induced by the electric field first occurs by domain tip motion and then by the lateral shift of walls. A memory effect due to the localization of defects along the domain boundaries has been observed.
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Snoeck et al. (1994) studied this question.
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