This paper describes a mobility model for submicrometer MOSFET device simulations. The model includes the quantum effects of electrons in the inversion layer proposed by Schwarz et al. By comparison with experimental data from scaled MOSFET's, the limitation of Yamaguchi's model in submicrometer device simulations is implied, while the quantum channel broadening effects have been proven significant in turn. This model can predict the current-voltage characteristics within 5- percent accuracy for scaled MOSFET's down to 0.5 µm.
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Hiroki et al. (1987) studied this question.
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