CdTe(100) layers of the thickness range from 0.7 to 15 μm were grown on GaAs(100) substrates by hot-wall epitaxy. The crystallinity of the layer was examined by reflection high-energy electron diffraction, x-ray rocking curve, and photoluminescence. The lattice relaxation were investigated by x-ray analysis and optical reflectance spectra. CdTe layers with thickness up to 15 μm were under compressive biaxial stress. In addition to the split exciton lines (n=1), the emission from excited states (n=2) was observed.
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Tatsuoka et al. (1989) studied this question.
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