Growth and characterization of Hg1−xMnxTe grown by molecular beam epitaxy

Growth of Hg1−xMnxTe epilayers by molecular beam epitaxy is reported here for the first time. The layers were grown on both CdTe(111) and GaAs(100) substrates. Hall measurements and electron diffraction experiments confirm their high quality. Both n-type and p-type layers were grown. The layers exhibited cut-off wavelengths in the infrared range, thus making them interesting for infrared detector device applications.