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A new copper dry etching method has been discovered and studied. The process is based on an unique HCl plasma-copper reaction that forms a solution soluble copper chloride compound. The physical ( e.g. , morphology, profile, volume expansion, and anisotropy) and chemical ( e.g. , reaction mechanism) aspects of the solid-state copper chloride growth mechanism have been delineated. This new process is applicable to the copper interconnection technology for advanced microelectronic and optoelectronic devices and circuits.
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Kuo et al. (2000) studied this question.
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