Temperature Dependent Photoluminescence Excitation Spectroscopy of GaN Quantum Dots in Site Controlled GaN/AlGaN Nanowires

Photoluminescence excitation spectroscopy is performed on a single GaN quantum dot embedded in a core shell type GaN/AlGaN nanowire. The temperature dependence of the photoluminescence excitation spectrum is presented, revealing the expected temperature dependent shift in both the exciton ground and excited states. The states are further characterised by comparison to 8-band k · p calculations.