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We report on calculations of capture and relaxation of carriers in quantum dots, specifically, InAs/GaAs self-assembled dots. We point out that the phonon-assisted carrier capture presents strong resonances versus the dot size and that the intradot Auger relaxation is extremely fast in these structures. This shows that energy relaxation in InAs/GaAs self-organized quantum dots is dominated by capture effects.
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Ferreira et al. (1999) studied this question.
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