The room temperature CW operation of a 1.55 µm wavelength GaInAsP/InP laser with a deeply etched third-order Bragg reflector consisting of a semiconductor/Benzocyclobutene periodic structure was obtained for the first time. A threshold current as low as 13.5 mA and differential quantum efficiency of 28% for a cavity length of 330 µm and a stripe width of 5 µm was obtained with 10 elements of the Bragg reflector on one side.
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Saka et al. (1999) studied this question.
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