Photon-stimulated current analysis of trap parameters in anthracene

Electronic trap depths in anthracene single crystals have been determined by monitoring the photon-stimulated current (PSC) as the sample is illuminated with light from a monochromator in the infrared and visible portions of the spectrum. The trap densities and capture cross-sections have been determined from an analysis of the transient PSC observed when the sample was illuminated with light of energy equal to the trap depth. Deep hole and electron traps were observed in both 'as-received' samples and in samples which had been deformed in a vice. In the deformed samples, however, it was observed that the presence of dislocations caused a large increase in the electron trap density but had little effect on the density of hole traps.