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We report the first observations of quantum size effects in GaAs/GaAs0.5P0.5 strained-layer superlattices (SLS’s). Using excitation and photoluminescence spectroscopies, we have observed optical transitions between excited states of the electron and hole quantum wells. These observations provide a measure of the biaxial compressive strain in the GaAs layers, interfacial roughness, and valence-band offset for the GaAs/GaP heterojunction.
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Gourley et al. (1984) studied this question.
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