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We have modulated the anisotropic magnetoresistance (AMR) in 3--40.3em0exnm manganite films using the ferroelectric field effect---a method that electrostatically varies the carrier density without affecting the lattice distortion. While significant changes have been induced in TC and ρ, the AMR ratio remains the same when the magnetic state is not changed. This scaling behavior is in striking contrast to chemical doping results, where similar modulation of the carrier concentration (~0.1∕Mn) changes the AMR ratio by 30%. The results reveal unambiguously the dominant role of chemical distortion in determining the AMR in manganites.
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Hong et al. (2006) studied this question.
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