Conduction-Valence Landau Level Mixing Effect

The electronic Landau level structures of the symmetric $Alsb{-}{Al}ₓ{Ga}_{1{-}x}Sb{-}InAs{-}{Al}ₓ{Ga}_{1{-}x}Sb{-}AlSb$ quantum wells are investigated within a six-band $k ̇ \.{}{}p$ finite difference method. We demonstrated that the conduction-valence Landau level mixing can yield a significant spin splitting for the InAs conduction-band electrons and therefore produce a prominent electron double-line structure with a nearly field-independent energy separation in the cyclotron-resonance spectra. This mixing effect can also yield strong oscillations in the electron cyclotron-resonance mass, amplitude, and linewidth.