Apertures were formed in single-growth, AsSb-based, long-wavelength (1.55 μm) vertical-cavity surface-emitting lasers by laterally etching the active region. The materials contrast between the AlAsSb-based mirrors and the AlInGaAs-based active region leads to a high selectivity for the etch, allowing long apertures to be formed with minimal etching of the mirrors. Lasers showing reduced threshold currents and increased efficiencies were demonstrated using these apertures.
No takes yet. Share an insight, caveat, or question.
Hall et al. (2001) studied this question.