We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μm active-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant ~ 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature.
No takes yet. Share an insight, caveat, or question.
Tosi et al. (2014) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: