The authors describe and discuss some features directly related to the presence of a high equilibrium built-in voltage in metal-insulator-semiconductor (MIS) structures. Initially the equilibrium barrier height is calculated as a function of the effective work-function difference. The role of the barrier height on the charge transport properties is then studied using analytical expressions for the majority and minority current under illumination. Due to the high barrier height, several current mechanisms, other than thermionic emission, can dominate the current-voltage characteristics. The use of a two-band dispersion relation in order to calculate the tunnel current is investigated and the anomalies observed in the activation plots (reported by authors) are discussed. Finally, they describe the difficulties encountered in determining the barrier height from Mott-Schottky characteristics, when the semiconductors surface is strongly inverted.
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Hanselaer et al. (1987) studied this question.
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