We report a theoretical investigation of carrier trapping in GaAs v-groove quantum wire structures. Our results show that trapping is fast in wires confined by AlGaAs alloy barriers where the growth process creates a Ga-rich vertical quantum well at the center of the v-groove: this acts as a highly effective scattering channel into quantum wires states. The results indicate that with suitable growth engineering, high-efficiency quantum wire structures can be obtained.
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Kiener et al. (1996) studied this question.