Capture of As by (001) InP surfaces exposed to As fluxes under chemical beam epitaxy conditions is investigated by virtual-interface analysis of real-time kinetic ellipsometric data. Intentional growth of ultrathin InAs layers is readily followed. Arsenic accumulated in the absence of growth can be completely removed by exposure to P, showing that As-P exchange occurs only in the outermost layer.
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Aspnes et al. (1994) studied this question.
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