Molecular beam epitaxial (MBE) layer heterostructures have been grown on GaAs wafers that received several different predeposition surface treatments. The electrical properties of the epitaxial structures have been correlated with the electrically active chemical impurities present at the substrate-epitaxial layer interface. Direct evidence has been found that relates the interface condition to the population of deep levels in the MBE structures. Photoreflectance modulation spectroscopy was used to qualitatively determine the electric field strengths of the epitaxial buffer layer regions.
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Gray et al. (1992) studied this question.
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