This letter reports the successful growth of short period (ZnSe)4/CdSe4 strained layer superlattices on (100) GaAs surface by atomic layer epitaxy. The superlattice was characterized by x-ray diffraction and Raman scattering. Superlattice period was calculated from the satellite peaks and was in good agreement with the expected value. 2LO Raman scattering in resonance with the E1h exciton level was observed. Experimental exciton energy was compared with the one calculated in a finite-square-well model. A Raman line due to stimulated Raman scattering was also observed.
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Chung et al. (1993) studied this question.