The design and test of a new type of fractional-sample indium-free substrate holder is discussed. This holder has been used for the growth of indium-free material from quarter-wafer slices of 50-mm GaAs material. The power required to bring the quarter-wafer indium-free holder to the desorption temperature of 582C is compared with that of a 50-mm full wafer holder and found to be approximately 7.5% lower under equivalent growth conditions.
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Kelin J. Kuhn (1990) studied this question.
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