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Barely insulating and barely metallic Si:As samples have been studied in the temperature range 4.2 K to 50 mK. Metallic samples show a new high-field magnetoresistance behavior explainable in terms of magnetic tuning of the critical density Nc. Insulating samples at fixed fields show Mott variable-range-hopping behavior and the increase of characteristic temperature T₀(N,H) with H results primarily from magnetic tuning of the localization-length exponent ν. Magnetocapacitance results depend on field-induced changes in both Nc and ν.
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Shafarman et al. (1986) studied this question.
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