Universality of the scaling exponents for theT=0 conductivity and Hall coefficient for very weakly compensated barely metallic silicon

The critical behavior of the T{→}0 conductivity and Hall coefficient data is reexamined. Several ``metallic'' samples very close to nc are found to fit Mott variable-range-hopping behavior expected for insulators. A slight increase in nc for Si:P and Si:B results yields {σ}(T{→}0) scaling exponents supporting universal behavior. The Hall results support scaling to a small value of n/nc-1, but are currently inconsistent with a divergence of RH(T{→}0) as n{→}nc.