We demonstrate a novel electroabsorption modulator operating at 1.55 μm fabricated by single-step selective area chemical beam epitaxy with no post-growth processing. The modulation depth is 14.5 dB for a voltage swing of 10 V. In addition, the modulator has a tunable absorption edge determined by the size of the growth mask opening.
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Chen et al. (1992) studied this question.
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