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The low-frequency noise (LFN) properties of the polymer field effect transistors (PFETs) using polymer semiconducting material are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarised. A general trend of proportionality between noise power density and the DC power applied to the PFET channel is observed in the data from publications. This trend implies that the mobility fluctuation in the PFET is the dominant noise source.
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Marinov et al. (2004) studied this question.
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