The conduction band offset ΔEc between the lattice-matched, compressively, or tensilely strained AlxGayIn1−x−yP and Ga0.52In0.48P, grown on GaAs, has been measured by combined photoluminescence and photoluminescence excitation spectroscopy at 10 K. The goal was to study the composition of the quaternary barrier for which the maximum offset ΔEc is reached in such heterostructures. Within the limited set of barrier composition studied here, the optimum material for this purpose is the lattice-matched Al0.31Ga0.21In0.48P, for which ΔEc=210±15 meV. Comparison with calculations based on the model solid theory allows one to precisely measure the parameters involved in this model, although a precise determination of all the deformation potentials is out of reach with the limited set of results presented here. Nevertheless, estimations using this set of parameters suggest that strained AlxGayIn1−x−yP cannot improve the conduction offset compared to the strain-free material.
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Vignaud et al. (2002) studied this question.
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