This work presents a single- and dual-port fully integrated millimeter-wave ultra-broadband vector network analyzer. Both circuits, realized in a commercial 0.35-μm SiGe:C technology with an ft/fmax of 170/250 GHz, cover an octave frequency bandwidth between 50-100 GHz. The presented chips can be configured to measure complex scattering parameters of external devices or determine the permittivity of different materials using an integrated millimeter-wave dielectric sensor. Both devices are based on a heterodyne architecture that achieves a receiver dynamic range of 57-72.5 dB over the complete design frequency range. Two integrated frequency synthesizer modules are included in each chip that enable the generation of the required test and local-oscillator millimeter-wave signals. A measurement 3σ statistical phase error lower than 0.3°is achieved. Automated measurement of changes in the dielectric properties of different materials is demonstrated using the proposed systems. The single- and dual-port network analyzer chips have a current consumption of 600 and 700 mA, respectively, drawn from a single 3.3-V supply.
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Nasr et al. (2014) studied this question.
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