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Effect of silicon on the defect density of Fe–20Cr– x Si ( x = 0, 1, 2) stainless steel alloys was investigated in deaerated pH 8.5 borate buffer solution at room temperature using Mott-Schottky analysis. Results showed that silicon was incorporated/dissolved in the passive film of Fe–20Cr– x Si ( x = 0, 1, 2) alloys. Mott-Schottky analysis revealed that the addition of silicon decreased the acceptor density (N A , V Cr −3 ), i.e., increased the Cr +3 content of the passive film. Also the donor densities, shallow donor (N D1 , V O +2 ) and deep donor (N D2 , V Cr +6 ), of the passive films formed were decreased. XPS analysis confirmed the presence of Si in the passive film of Si containing alloys. This enriched silicon along with higher Cr +3 concentration of the passive film, dictated its enhanced protectiveness and stability.
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Ihsan‐ul‐Haq Toor (2011) studied this question.
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